- weak inversion region
- область слабкої інверсії, підпорогова область
English-Ukrainian dictionary of microelectronics. 2013.
weak inversion region
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MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Subthreshold leakage — or subthreshold conduction or subthreshold drain current is the current that flows between the source and drain of a MOSFET when the transistor is in the subthreshold region, that is, for gate to source voltages below the threshold voltage. The… … Wikipedia
Channel length modulation — Cross section of a MOSFET operating in the saturation region One of several short channel effects in MOSFET scaling, channel length modulation (CLM) is a shortening of the length of the inverted channel region with increase in drain bias for… … Wikipedia
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Subthreshold Leakage — Bei subthreshold leakage (englisch, dt. ‚Unterschwellspannungsleckstrom‘) handelt es sich um einen so genannten Leckstrom in MOS Transistoren, welche in aktuellen integrierten Schaltungen wie Prozessoren oder Mikrocontrollern verwendet werden.… … Deutsch Wikipedia
Subthreshold leakage — Bei subthreshold leakage (dt. »Unterschwellspannungsleckstrom«) handelt es sich um einen so genannten Leckstrom in MOS Transistoren, welche in aktuellen integrierten Schaltungen wie Prozessoren oder Mikrocontrollern verwendet werden.… … Deutsch Wikipedia
Unterschwellspannungsstrom — Bei subthreshold leakage (dt. »Unterschwellspannungsleckstrom«) handelt es sich um einen so genannten Leckstrom in MOS Transistoren, welche in aktuellen integrierten Schaltungen wie Prozessoren oder Mikrocontrollern verwendet werden.… … Deutsch Wikipedia
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Supercell — A supercell is a severe thunderstorm with a deep, continuously rotating updraft (a mesocyclone). [ [http://www.stormchasers.au.com/lemon7.htm 12B ] ] Of the four classifications of thunderstorms (supercell, single cell, multi cell, and squall… … Wikipedia
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Drain Induced Barrier Lowering — As channel length decreases, the barrier φB to be surmounted by an electron from the source on its way to the drain reduces Drain induced barrier lowering or DIBL is a secondary effect in MOSFETs referring originally to a reduction of threshold… … Wikipedia
